Electronic and optical properties of staggered InGaN/InGaN quantum-well light-emitting diodes
Article first published online: 29 JUN 2009
Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 206, Issue 11, pages 2637–2640, November 2009
How to Cite
Park, S.-H., Ahn, D., Koo, B.-H. and Kim, J.-W. (2009), Electronic and optical properties of staggered InGaN/InGaN quantum-well light-emitting diodes. Phys. Status Solidi A, 206: 2637–2640. doi: 10.1002/pssa.200925020
- Issue published online: 6 NOV 2009
- Article first published online: 29 JUN 2009
- Manuscript Accepted: 6 MAY 2009
- Manuscript Revised: 3 APR 2009
- Manuscript Received: 12 JAN 2009
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