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Original Paper

Spatially resolved contact-resistance measurements on crystalline silicon solar cells

  1. Stefan Kontermann*,
  2. Matthias Hörteis,
  3. Alexander Ruf,
  4. Sergio Feo,
  5. Ralf Preu

Article first published online: 27 JUL 2009

DOI: 10.1002/pssa.200925077

Issue

physica status solidi (a)

physica status solidi (a)

Volume 206, Issue 12, pages 2866–2871, December 2009

Additional Information

How to Cite

Kontermann, S., Hörteis, M., Ruf, A., Feo, S. and Preu, R. (2009), Spatially resolved contact-resistance measurements on crystalline silicon solar cells. Phys. Status Solidi A, 206: 2866–2871. doi: 10.1002/pssa.200925077

Author Information

  1. Fraunhofer Institute for Solar Energy Systems, Heidenhofstrasse 10, 79110 Freiburg, Germany

*Phone: +49 761 4588 5435, Fax: +49 761 4588 9000

Publication History

  1. Issue published online: 7 DEC 2009
  2. Article first published online: 27 JUL 2009
  3. Manuscript Accepted: 16 JUN 2009
  4. Manuscript Revised: 20 APR 2009
  5. Manuscript Received: 22 DEC 2008

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Keywords:

  • 73.40.Cg;
  • 84.60.Jt;
  • 85.30.De

Abstract

This paper demonstrates a method for quantitatively determining the spatially resolved contact resistance of silicon solar cells. Contact-resistance maps obtained by this technique on screen-printed industrial silicon solar cells are presented and discussed. Extending the contact-resistance map to a series-resistance map by adding contributions from the rear, bulk, emitter, and metallization shows this map to qualitatively agree well with photoluminescence (PL) series-resistance imaging. Compared to existing approaches, our technique enables the spatially resolved measurement of the contact resistance separately from any other series-resistance contributions.

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