Device characteristics and metal–dielectric high reflectivity coating analysis of λ ∼ 1.3 µm InGaAsP/InGaAsP MQW PBH lasers
Article first published online: 11 AUG 2009
Copyright © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 207, Issue 1, pages 217–223, January 2010
How to Cite
Leem, J. W. and Yu, J. S. (2010), Device characteristics and metal–dielectric high reflectivity coating analysis of λ ∼ 1.3 µm InGaAsP/InGaAsP MQW PBH lasers. Phys. Status Solidi A, 207: 217–223. doi: 10.1002/pssa.200925166
- Issue published online: 7 JAN 2010
- Article first published online: 11 AUG 2009
- Manuscript Accepted: 6 JUL 2009
- Manuscript Revised: 21 JUN 2009
- Manuscript Received: 7 APR 2009
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