Growth and electrical properties of AlxGa1−xN/GaN heterostructures with different Al-content
Article first published online: 22 JUN 2009
Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 206, Issue 11, pages 2652–2657, November 2009
How to Cite
Köhler, K., Müller, S., Waltereit, P., Kirste, L., Menner, H. P., Bronner, W. and Quay, R. (2009), Growth and electrical properties of AlxGa1−xN/GaN heterostructures with different Al-content. Phys. Status Solidi A, 206: 2652–2657. doi: 10.1002/pssa.200925168
- Issue published online: 6 NOV 2009
- Article first published online: 22 JUN 2009
- Manuscript Accepted: 13 MAY 2009
- Manuscript Revised: 29 APR 2009
- Manuscript Received: 7 APR 2009
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