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Keywords:

  • 52.77.Dq;
  • 61.46.–w;
  • 78.30.Na;
  • 81.15.Gh

Abstract

We have fabricated carbon nanowalls (CNWs) composed of monolithic self-sustaining nanographene sheets standing vertically on a Si substrate, using plasma-enhanced chemical vapor deposition with a C2F6/H2 mixture. The crystallinity, evaluated by Raman spectroscopy and synchrotron X-ray surface diffraction, and the electrical properties of the CNWs were improved by introducing O2 gas into the source gas mixture during the CNW growth process. The temperature dependence of the resistivity of the CNW films exhibited semiconductor behavior.