Engineering the electronic structure of the CuPc/BPE-PTCDI interface by WO3 doping of CuPc
Article first published online: 24 NOV 2009
Copyright © 2009 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 206, Issue 12, pages 2757–2762, December 2009
How to Cite
Hein, C., Mankel, E., Mayer, T. and Jaegermann, W. (2009), Engineering the electronic structure of the CuPc/BPE-PTCDI interface by WO3 doping of CuPc. Phys. Status Solidi A, 206: 2757–2762. doi: 10.1002/pssa.200925290
- Issue published online: 7 DEC 2009
- Article first published online: 24 NOV 2009
- Manuscript Accepted: 26 OCT 2009
- Manuscript Revised: 12 OCT 2009
- Manuscript Received: 4 JUN 2009
We investigate the electronic interface properties of an organic bilayer heterojunction solar cell, built of CuPc/BPE-PTCDI as donor/acceptor system. Band alignment of this interface and interface potentials were measured using synchrotron induced photoemission spectroscopy (SXPS) on stepwise deposited BPE-PTCDI on doped and non doped CuPc. Using non doped CuPc at thermodynamic equilibrium the bands bend at the interface in a direction that hinders dissociation of geminate pairs.
As a measure to form a band bending that supports geminate pair separation p-doping of CuPc is tested. As dopant WO3 was applied being a promising material for p-doping of CuPc due to its high ionization potential. At the doped CuPc/BPE-PTCDI interface the internal field is actually reversed now driving holes in CuPc and electrons in BPE-PTCDI away from the interface.