Chemistry and electronic properties of ferromagnetic metal-organic semiconductor interfaces: Fe on CuPc



The chemistry and electronic properties of the interfaces formed between the ferromagnetic metal (Fe) and the model organic semiconductor copper phthalocyanine are investigated in ultra-high vacuum conditions for the case of metal deposition onto the organic molecular thin film. The studies were performed by means of core-level and valence-band high-resolution photoemission electron spectroscopy (PES) as well as near-edge X-ray absorption fine structure using synchrotron radiation. Metal overlayer formation on the top of the organic semiconductor was observed without substantial penetration of deposited metal species into the organic film. At the thin interface layer the ferromagnetic metal shows strong chemical interaction with the nitrogen and carbon of the organic films. Moreover, our results infer that, as a consequence of Fe deposition onto CuPc, central copper atoms of the organic molecules at the interface are reduced from Cu(II) to Cu(I), while Fe atoms are oxidized and/or the ferromagnetic metal replaces this central Cu atom. Further optimization of such an interface is thus required to allow and/or facilitate the injection of spin-polarized carriers into organic semiconductors.