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Electrical transport properties of amorphous CNx/p-Si heterostructures

Authors

  • X. C. Wang,

    Corresponding author
    1. Tianjin Key Laboratory of Film Electronic and Communication Device, School of Electronics Information and Communications Engineering, Tianjin University of Technology, Tianjin 300191, P. R. China
    • Phone: +86-22-60214197, Fax: +86-22-60214197
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  • X. M. Chen,

    1. Tianjin Key Laboratory of Film Electronic and Communication Device, School of Electronics Information and Communications Engineering, Tianjin University of Technology, Tianjin 300191, P. R. China
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  • B. H. Yang

    1. Tianjin Key Laboratory of Film Electronic and Communication Device, School of Electronics Information and Communications Engineering, Tianjin University of Technology, Tianjin 300191, P. R. China
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Abstract

The electrical transport properties of amorphous CNx/p-Si heterostructures fabricated using reactive facing-target sputtering were investigated systematically. The obvious rectifying effect is observed in the IV curves for the heterostructures fabricated at the nitrogen partial pressure (equation image) of 20%, and the resistance of the heterostructures in both the forward and reverse voltage ranges increases with the decrease of the current and temperature. At low-voltage range, the resistance satisfies the relation of equation image, and the slope of the equation image plots increases with the decrease of temperature. The electrical transport characteristic of the heterostructures can be affected by the changes of the number and cluster size of sp2 C and the ratio of N–C(sp2)/N–C(sp3) by adjusting equation image significantly, and the good rectifying effect of the heterostructures fabricated at a certain condition makes them useful in the field of electronic devices.

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