Effect of lattice mismatch on gate lag in high quality InAlN/AlN/GaN HFET structures
Version of Record online: 14 OCT 2009
Copyright © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 207, Issue 1, pages 211–216, January 2010
How to Cite
Leach, J. H., Wu, M., Ni, X., Li, X., Özgür, Ü. and Morkoç, H. (2010), Effect of lattice mismatch on gate lag in high quality InAlN/AlN/GaN HFET structures. Phys. Status Solidi A, 207: 211–216. doi: 10.1002/pssa.200925362
- Issue online: 7 JAN 2010
- Version of Record online: 14 OCT 2009
- Manuscript Accepted: 17 SEP 2009
- Manuscript Revised: 13 SEP 2009
- Manuscript Received: 13 JUL 2009
- Air Force Office of Scientific Research
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