Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity
Version of Record online: 8 DEC 2009
Copyright © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 207, Issue 1, pages 45–48, January 2010
How to Cite
Collazo, R., Mita, S., Xie, J., Rice, A., Tweedie, J., Dalmau, R. and Sitar, Z. (2010), Implementation of the GaN lateral polarity junction in a MESFET utilizing polar doping selectivity. Phys. Status Solidi A, 207: 45–48. doi: 10.1002/pssa.200982629
- Issue online: 7 JAN 2010
- Version of Record online: 8 DEC 2009
- Manuscript Accepted: 7 NOV 2009
- Manuscript Revised: 24 JUL 2009
- Manuscript Received: 20 JUN 2009
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