MOVPE growth and characterization of indium nitride on C-, A-, M-, and R-plane sapphire
Version of Record online: 8 DEC 2009
Copyright © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 207, Issue 1, pages 24–28, January 2010
How to Cite
Moret, M., Ruffenach, S., Briot, O. and Gil, B. (2010), MOVPE growth and characterization of indium nitride on C-, A-, M-, and R-plane sapphire. Phys. Status Solidi A, 207: 24–28. doi: 10.1002/pssa.200982641
- Issue online: 7 JAN 2010
- Version of Record online: 8 DEC 2009
- Manuscript Revised: 8 OCT 2009
- Manuscript Accepted: 8 OCT 2009
- Manuscript Received: 4 OCT 2009
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