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Doping of oligo(phenyl acetylene) with iodine vapour

Authors

  • R. Bakker,

    Corresponding author
    1. Faculty of Science, Debye Institute for Nanomaterials Science, Utrecht University, P.O. Box 80000, 3508 TA Utrecht, The Netherlands
    2. Department of Physics and Astronomy, Nanophotonics - Physics of Devices, P.O. Box 80000, 3508 TA Utrecht, The Netherlands
    • Phone: +31 30 253 2509, Fax: +31 30 254 31 65
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  • P. Weijers,

    1. Faculty of Science, Debye Institute for Nanomaterials Science, Utrecht University, P.O. Box 80000, 3508 TA Utrecht, The Netherlands
    2. Department of Physics and Astronomy, Nanophotonics - Physics of Devices, P.O. Box 80000, 3508 TA Utrecht, The Netherlands
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  • C. H. M. van der Werf,

    1. Faculty of Science, Debye Institute for Nanomaterials Science, Utrecht University, P.O. Box 80000, 3508 TA Utrecht, The Netherlands
    2. Department of Physics and Astronomy, Nanophotonics - Physics of Devices, P.O. Box 80000, 3508 TA Utrecht, The Netherlands
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  • J. K. Rath,

    1. Faculty of Science, Debye Institute for Nanomaterials Science, Utrecht University, P.O. Box 80000, 3508 TA Utrecht, The Netherlands
    2. Department of Physics and Astronomy, Nanophotonics - Physics of Devices, P.O. Box 80000, 3508 TA Utrecht, The Netherlands
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  • R. E. I. Schropp

    1. Faculty of Science, Debye Institute for Nanomaterials Science, Utrecht University, P.O. Box 80000, 3508 TA Utrecht, The Netherlands
    2. Department of Physics and Astronomy, Nanophotonics - Physics of Devices, P.O. Box 80000, 3508 TA Utrecht, The Netherlands
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Abstract

The doping with I2-vapour and dopant effusion of thin films of conjugated oligomers are reported in this work. The layers have been created solvent-free, by initiated chemical vapour deposition (iCVD). FTIR spectra show an interaction of the dopant with the phenyl ring of the oligomer. Reflectance/transmittance measurements showed a saturation of the dopant in the 400 nm thick layers after 40 min. The films change from transparent to brown-green in the doping process and show a drastic increase in conductivity. The material is quite easily processable and can be grown at an adequate rate (∼3.5 nm/min) for thin film device applications.

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