Optically pumped lasing at 300.4 nm in AlGaN MQW structures grown by plasma-assisted molecular beam epitaxy on c-Al2O3
Version of Record online: 17 MAY 2010
Copyright © 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 207, Issue 6, pages 1313–1317, June 2010
How to Cite
Jmerik, V. N., Mizerov, A. M., Shubina, T. V., Toropov, A. A., Belyaev, K. G., Sitnikova, A. A., Yagovkina, M. A., Kop'ev, P. S., Lutsenko, E. V., Danilchyk, A. V., Rzheutskii, N. V., Yablonskii, G. P., Monemar, B. and Ivanov, S. V. (2010), Optically pumped lasing at 300.4 nm in AlGaN MQW structures grown by plasma-assisted molecular beam epitaxy on c-Al2O3. Phys. Status Solidi A, 207: 1313–1317. doi: 10.1002/pssa.200983612
- Issue online: 14 JUN 2010
- Version of Record online: 17 MAY 2010
- Manuscript Accepted: 10 FEB 2010
- Manuscript Received: 7 OCT 2009
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