Original Paper

Structural characterization of thick (1122) GaN layers grown by HVPE on m-plane sapphire

  1. Alexander Usikov1,*,
  2. Vitali Soukhoveev1,
  3. Lisa Shapovalov1,
  4. Alexander Syrkin1,
  5. Vladimir Ivantsov1,
  6. Bernard Scanlan1,
  7. Alexey Nikiforov2,
  8. Andre Strittmatter3,
  9. Noble Johnson3,
  10. Jian-Guo Zheng4,
  11. Philippe Spiberg5,
  12. Hussein El-Ghoroury5

Article first published online: 26 MAY 2010

DOI: 10.1002/pssa.200983655

Issue

physica status solidi (a)

physica status solidi (a)

Volume 207, Issue 6, pages 1295–1298, June 2010

Additional Information

How to Cite

Usikov, A., Soukhoveev, V., Shapovalov, L., Syrkin, A., Ivantsov, V., Scanlan, B., Nikiforov, A., Strittmatter, A., Johnson, N., Zheng, J.-G., Spiberg, P. and El-Ghoroury, H. (2010), Structural characterization of thick (1122) GaN layers grown by HVPE on m-plane sapphire. physica status solidi (a), 207: 1295–1298. doi: 10.1002/pssa.200983655

Author Information

  1. 1

    Technologies and Devices International, An Oxford Instruments Company, 12214 Plum Orchard Dr., Silver Spring, MD 20852, USA

  2. 2

    Department of Electrical and Computer Engineering, Boston University, 8 Saint Mary's Street, Boston, MA 02215, USA

  3. 3

    Palo Alto Research Center, 3333 Coyote Hill Road, Palo Alto, CA 94304, USA

  4. 4

    Materials Characterization Center, LEXI/Calit2, University of California, Irvine, CA 92697, USA

  5. 5

    Ostendo Technologies, Inc., 6185 Paseo del Norte, Ste. 200, Carlsbad, CA 92011, USA

*Phone: +01 301 572 7834, Fax: +01 999 999 999

Publication History

  1. Issue published online: 14 JUN 2010
  2. Article first published online: 26 MAY 2010
  3. Manuscript Accepted: 26 JAN 2010
  4. Manuscript Revised: 22 JAN 2010
  5. Manuscript Received: 6 NOV 2009

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Keywords:

  • cathodoluminescence;
  • dislocations;
  • GaN;
  • HVPE;
  • laser;
  • quantum wells;
  • structure

Abstract

This paper reports structural characterization of thick equation image-oriented GaN layers by means of XRD, TEM, and micro- CL. The semi-polar equation image GaN layers were grown on m-plane sapphire substrates by HVPE. Their structural quality improved with thickness. Threading dislocation density of 3 × 108 cm−2 and stacking faults density of 4 × 104 cm−1 were measured at the surface of 20 µm thick equation image GaN layers. The semi-polar GaN layers were used as template substrates to grow InGaN/GaN MQW heterostructures by MOCVD that demonstrated optically pumped lasing at 500 nm wavelength. The results demonstrate the longest wavelength yet reported for a photo-pumped laser on template substrates.

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