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Keywords:

  • FET;
  • GaN;
  • HEMT;
  • InAlN;
  • MBE;
  • ohmic contact;
  • regrowth

Abstract

Ohmic regrowth by molecular beam epitaxy (MBE) has been investigated for metal-face InAlN/AlN/GaN high electron mobility transistors (HEMTs) for the first time. Using SiO2 mask n+-GaN was regrown in the source/drain region while deposition on the mask was lifted off in buffered HF after regrowth. The lowest contact resistance measured was 0.40 ± 0.23 Ω mm by the transmission line method (TLM) in this initial study. The peak output current density of 1.25 A/mm at Vgs = 3 V and extrinsic transconductance of 264 mS/mm at Vds = 5 V were observed in 500-nm gate length InAlN/Al/GaN HEMTs passivated by SiN with regrowth contacts.