Surface characterization of quinhydrone–methanol and iodine–methanol passivated silicon substrates using X-ray photoelectron spectroscopy
Article first published online: 20 AUG 2010
Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 208, Issue 1, pages 86–90, January 2011
How to Cite
Chhabra, B., Weiland, C., Opila, R. L. and Honsberg, C. B. (2011), Surface characterization of quinhydrone–methanol and iodine–methanol passivated silicon substrates using X-ray photoelectron spectroscopy. Phys. Status Solidi A, 208: 86–90. doi: 10.1002/pssa.201026101
- Issue published online: 12 JAN 2011
- Article first published online: 20 AUG 2010
- Manuscript Accepted: 14 JUL 2010
- Manuscript Revised: 9 JUL 2010
- Manuscript Received: 4 MAR 2010
- minority carrier lifetime;
- X-ray photoelectron spectroscopy
Hydrogen-terminated silicon substrates were passivated with quinhydrone–methanol (QHY/ME) and iodine–methanol (I2/ME), and the chemical changes occurring at the surface were investigated using X-ray photoelectron spectroscopy (XPS). The XPS surface studies demonstrate that QHY/ME passivation provides reduced oxidation, less carbon contamination, and a chemically inert surface. Electrical characterization also demonstrates higher minority carrier lifetimes of QHY/ME passivated substrates as compared to I2/ME passivated substrates. The quality of surface treatment was also characterized using the contact angle measurement, which confirms the presence of a hydrophobic organic layer on the surface after QHY/ME passivation.
Si 2p XPS spectra of the QHY/ME, I2/ME samples, and H-terminated silicon. With a peak at 102.9 eV for I2/ME, it is evident that it provides poor surface passivation than QHY/ME where no surface oxidation is observed.