Ultraviolet light sensitive In-doped ZnO thin film field effect transistor printed by inkjet technique
Article first published online: 18 OCT 2010
Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 208, Issue 1, pages 206–209, January 2011
How to Cite
Wu, Y., Girgis, E., Ström, V., Voit, W., Belova, L. and Rao, K. V. (2011), Ultraviolet light sensitive In-doped ZnO thin film field effect transistor printed by inkjet technique. Phys. Status Solidi A, 208: 206–209. doi: 10.1002/pssa.201026264
- Issue published online: 12 JAN 2011
- Article first published online: 18 OCT 2010
- Manuscript Accepted: 19 SEP 2010
- Manuscript Revised: 23 JUL 2010
- Manuscript Received: 19 MAY 2010
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