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Improved switching characteristics of perovskite oxide-based resistance random access memory by high-pressure oxygen annealing at low temperature

Authors

  • Wootae Lee,

    1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju, Korea 500-712, Republic of Korea
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  • Minseok Jo,

    1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju, Korea 500-712, Republic of Korea
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  • Jubong Park,

    1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju, Korea 500-712, Republic of Korea
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  • Joonmyoung Lee,

    1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju, Korea 500-712, Republic of Korea
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  • Sangsu Park,

    1. Department of Nanobio Materials and Electronics (WCU), Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju, Korea 500-712, Republic of Korea
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  • Seonghyun Kim,

    1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju, Korea 500-712, Republic of Korea
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  • Seungjae Jung,

    1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju, Korea 500-712, Republic of Korea
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  • Jungho Shin,

    1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju, Korea 500-712, Republic of Korea
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  • Daeseok Lee,

    1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju, Korea 500-712, Republic of Korea
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  • Manzar Siddik,

    1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju, Korea 500-712, Republic of Korea
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  • Hyunsang Hwang

    Corresponding author
    1. School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju, Korea 500-712, Republic of Korea
    2. Department of Nanobio Materials and Electronics (WCU), Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro (Oryong-dong), Buk-gu, Gwangju, Korea 500-712, Republic of Korea
    • Phone: +82 62 715 2314, Fax: +82 62 715 2304.
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Abstract

We successfully fabricated perovskite oxide-based resistance random access memory (RRAM) with improved resistance switching characteristics, at a low temperature. A high-pressure oxygen-annealed (HPOA) W/Al/Pr0.7Ca0.3MnO3 (PCMO)/Pt device shows good memory characteristics such as device uniformity, endurance, and improved switching speed. X-ray photoelectron spectroscopy reveals large amounts of oxygen effectively incorporated into the PCMO layer during HPOA, enhancing the crystallization of PCMO at low temperature. X-ray diffraction analysis confirmed that an amorphous PCMO layer was converted to a polycrystalline structure. These results suggest that HPOA is a promising method for fabricating reliable perovskite oxide-based RRAM at a low temperature.

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