• GaAs;
  • MBE;
  • nanostructures;
  • multiple stacking;
  • (311) surface


Unique quantum wire (QWR) network-like nanostructures (QWRNNs) and ordered checker board-like nanostructures (OCBNs) were demonstrated on GaAs (311) A and B by applying a low In composition multiple-layer stacking technique. More specifically, the combination of low In composition and multilayer systems, [In0.18Ga0.82As/GaAs]m where m = 1, 4, 8, 10, 12, and 16 periods, have been investigated on GaAs (311) A and B by molecular beam epitaxy (MBE). Under a same growth condition, QWRNNs were demonstrated on GaAs (311)A while OCBNs were fabricated on GaAs (311)B as a result of the strain accumulation and transfer through the multiple layers stacked. An appropriate control of the number of layers stacked and spacer thickness can result in an improved ordering and uniformity of QWRNNs and OCBNs.