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Original Paper
Point defect evolution in low-temperature MOCVD growth of InN
Article first published online: 16 NOV 2011
DOI: 10.1002/pssa.201100083
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Rauch, C., Tuna, Ö., Giesen, C., Heuken, M. and Tuomisto, F. (2012), Point defect evolution in low-temperature MOCVD growth of InN. Phys. Status Solidi A, 209: 87–90. doi: 10.1002/pssa.201100083
Publication History
- Issue published online: 15 DEC 2011
- Article first published online: 16 NOV 2011
- Manuscript Revised: 7 JUL 2011
- Manuscript Accepted: 7 JUL 2011
- Manuscript Received: 29 APR 2011
- Abstract
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Keywords:
- growth;
- InN;
- MOCVD;
- positron annihilation;
- vacancies
Abstract
We present a systematic study of the influence of the growth temperature on the point defect landscape in metal-organic chemical vapor deposition (MOCVD) InN. State-of-the-art InN layers were grown at temperatures from 500 to 550 °C and positron annihilation spectroscopy has been used to investigate the incorporation of vacancy defects during the growth process. We find that a decrease of the growth temperature below 550 °C leads to increasing free carrier concentrations and lower mobilities. At the same time, positron measurements observe an enhanced introduction of mixed In-N vacancy complexes which gather preferentially at the interface between the InN layer and the GaN template. As the measured In vacancy concentration seems too low to promote efficient defect complexing, it suggests an increased formation of N vacancies at low temperature growth through insufficient cracking of NH3, which may be responsible for the observed increase in the free carrier concentration.