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    Farid Medjdoub, Riad Kabouche, Astrid Linge, Bertrand Grimbert, Malek Zegaoui, Piero Gamarra, Cédric Lacam, Maurice Tordjman, Marie-Antoinette di Forte-Poisson, High electron mobility in high-polarization sub-10 nm barrier thickness InAlGaN/GaN heterostructure, Applied Physics Express, 2015, 8, 10, 101001

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