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InN grown by migration enhanced afterglow (MEAglow)

Authors

  • Kenneth Scott A. Butcher,

    Corresponding author
    1. Semiconductor Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Rd, Thunder Bay P7B 5E1, Ontario, Canada
    2. Meaglow Ltd, 1294 Balmoral St, Suite 150, Thunder Bay P7B 5Z5, Ontario, Canada
    • Phone: +1-807-2524391, Fax: 1 201 839 4341
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  • Dimiter Alexandrov,

    Corresponding author
    1. Semiconductor Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Rd, Thunder Bay P7B 5E1, Ontario, Canada
    2. Meaglow Ltd, 1294 Balmoral St, Suite 150, Thunder Bay P7B 5Z5, Ontario, Canada
    • Phone: +1-807-3438311, Fax: 1 201 839 4341
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  • Penka Terziyska,

    1. Semiconductor Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Rd, Thunder Bay P7B 5E1, Ontario, Canada
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  • Vasil Georgiev,

    1. Semiconductor Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Rd, Thunder Bay P7B 5E1, Ontario, Canada
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  • Dimka Georgieva,

    1. Semiconductor Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Rd, Thunder Bay P7B 5E1, Ontario, Canada
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  • Peter W. Binsted

    1. Semiconductor Laboratory, Department of Electrical Engineering, Lakehead University, 955 Oliver Rd, Thunder Bay P7B 5E1, Ontario, Canada
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Abstract

InN thin films were grown by a new technique, migration enhanced afterglow (MEAglow), a chemical vapour deposition (CVD) form of migration enhanced epitaxy (MEE). Here we describe the apparatus used for this form of film deposition, which includes a scalable hollow cathode nitrogen plasma source. Initial film growth results for InN are also presented including atomic force microscopy (AFM) images that indicate step flow growth with samples having root mean square (RMS) surface roughness of as little as 0.103 nm in some circumstances for film growth on sapphire substrates. X-ray diffraction (XRD) results are also provided for samples with a full width half maximum (FWHM) of the (0002) ω-2θ peak of as little as 290 arcsec. Low pressure conditions that can result in damage to the InN during growth are described.

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