Catalyst-free growth of InN nanorods by metal-organic chemical vapor deposition

Authors

  • Min Hwa Kim,

    1. Hybrid Materials Program (WCU), Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
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  • Dae Young Moon,

    1. Hybrid Materials Program (WCU), Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
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  • Jinsub Park,

    1. Department of Electronic Engineering, Hanyang University, Seoul 133-791, Korea
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  • Yasushi Nanishi,

    1. Hybrid Materials Program (WCU), Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
    2. Department of Photonics, Ritsumeikan University, Shiga 525-8577, Japan
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  • Gyu-Chul Yi,

    Corresponding author
    1. National Creative Research Initiative Center for Semiconductor Nanorods, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea
    • Phone: +82 2 880 7169, Fax: +82 2 884 3002
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  • Euijoon Yoon

    Corresponding author
    1. Hybrid Materials Program (WCU), Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea
    2. Department of Nano Science and Technology, Graduate School of Convergence Science and Technology, Seoul National University, Suwon 443-270, Korea
    3. Energy Semiconductor Research Center, Advanced Institute of Convergence Technology, Seoul National University, Suwon 443-270, Korea
    • Phone: +82 2 880 2651, Fax: +82 2 6008 3712
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Abstract

We demonstrated the growth of catalyst-free InN nanostructures including nanorods on (0001) Al2O3 substrates using metal-organic chemical vapor deposition. As the growth time increased, growth rate along c-direction increased superlinearly with decreasing c-plane area fractions and increasing side wall areas. It was also found that desorption from the sidewalls of InN nanostructures during the InN nanorods formation was one of essential key parameters of the growth mechanism. We propose a growth model to explain the InN nanostructure evolution by considering the side wall desorption and re-deposition of indium at top c-plane surfaces.

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