High-efficiency InGaN/GaN quantum well structures on large area silicon substrates
Article first published online: 21 NOV 2011
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 209, Issue 1, pages 13–16, January 2012
How to Cite
Zhu, D., McAleese, C., Häberlen, M., Kappers, M. J., Hylton, N., Dawson, P., Radtke, G., Couillard, M., Botton, G. A., Sahonta, S.-L. and Humphreys, C. J. (2012), High-efficiency InGaN/GaN quantum well structures on large area silicon substrates. Phys. Status Solidi A, 209: 13–16. doi: 10.1002/pssa.201100129
- Issue published online: 15 DEC 2011
- Article first published online: 21 NOV 2011
- Manuscript Accepted: 25 JUL 2011
- Manuscript Revised: 22 JUL 2011
- Manuscript Received: 2 MAY 2011
- Ministry of Research and Innovation of Ontario (ISOP program). G. R. and G. A. B.
- electron microscopy;
The growth techniques which have enabled the realization of InGaN-based multi-quantum-well (MQW) structures with high internal quantum efficiencies (IQE) on 150 mm (6-in.) silicon substrates are reviewed. InGaN/GaN MQWs are deposited onto GaN templates on large-area (111) silicon substrates, using AlGaN strain-mediating interlayers to inhibit thermal-induced cracking and wafer-bowing, and using a SiNx interlayer to reduce threading dislocation densities in the active region of the MQW structure. MQWs with high IQE approaching 60% have been demonstrated. Atomic resolution electron microscopy and EELS analysis have been used to study the nature of the important interface between the Si(111) substrate and the AlN nucleation layer. We demonstrate an amorphous SiNx interlayer at the interface about 2 nm wide, which does not, however, prevent good epitaxy of the AlN on the Si(111) substrate.