Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials

Authors

  • K. Pantzas,

    Corresponding author
    1. Georgia Institute of Technology, GT-Lorraine, 2-3 Rue Marconi, 57070 Metz, France
    2. UMI 2958, Georgia Tech-CNRS, 2-3 Rue Marconi, 57070 Metz, France
    • Phone: +33 (0)3 87 20 39 21, Fax: +33 (0)3 87 20 39 40
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  • G. Patriarche,

    1. CNRS-Laboratoire de Photonique et des Nanostructures (LPN), Route de Nozay, 91460 Marcoussis, France
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  • G. Orsal,

    1. UMI 2958, Georgia Tech-CNRS, 2-3 Rue Marconi, 57070 Metz, France
    2. Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), EA4423, Université Paul Verlaine Metz - Supélec, 2 Rue Edouard Belin, 57070 Metz, France
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  • S. Gautier,

    1. UMI 2958, Georgia Tech-CNRS, 2-3 Rue Marconi, 57070 Metz, France
    2. Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), EA4423, Université Paul Verlaine Metz - Supélec, 2 Rue Edouard Belin, 57070 Metz, France
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  • T. Moudakir,

    1. UMI 2958, Georgia Tech-CNRS, 2-3 Rue Marconi, 57070 Metz, France
    2. Supélec, 2 Rue Edouard Belin, 57070 Metz, France
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  • M. Abid,

    1. Georgia Institute of Technology, GT-Lorraine, 2-3 Rue Marconi, 57070 Metz, France
    2. UMI 2958, Georgia Tech-CNRS, 2-3 Rue Marconi, 57070 Metz, France
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  • V. Gorge,

    1. LGEP, UMR 8507 CNRS, Supélec, UPMC, Univ. Paris-Sud 11, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex, France
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  • Z. Djebbour,

    1. LGEP, UMR 8507 CNRS, Supélec, UPMC, Univ. Paris-Sud 11, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex, France
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  • P. L. Voss,

    1. Georgia Institute of Technology, GT-Lorraine, 2-3 Rue Marconi, 57070 Metz, France
    2. UMI 2958, Georgia Tech-CNRS, 2-3 Rue Marconi, 57070 Metz, France
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  • A. Ougazzaden

    1. Georgia Institute of Technology, GT-Lorraine, 2-3 Rue Marconi, 57070 Metz, France
    2. UMI 2958, Georgia Tech-CNRS, 2-3 Rue Marconi, 57070 Metz, France
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Abstract

In this paper we report on a spontaneous 2D/3D transition observed in InGaN alloys after 60 nm of growth. This transition is responsible for the formation of a stack of distinct InGaN layers. The driving mechanism is shown to be lateral fluctuations of the indium composition, that arise to accommodate the increasing strain energy of the InGaN layer. Three distinct stages of growth have been identified. First, a homogeneous, 2D InGaN layer forms, pseudomorphically strained on the underlying GaN. Then, at around 30 nm large lateral fluctuations of the indium composition are observed and a second pseudomorphic layer, composed of indium-rich and indium-poor clusters, is formed. Finally induces a 2D/3D transition at 60 nm and a 3D InGaN layer is formed.

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