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Original Paper

Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials

  1. K. Pantzas1,2,*,
  2. G. Patriarche3,
  3. G. Orsal2,4,
  4. S. Gautier2,4,
  5. T. Moudakir2,5,
  6. M. Abid1,2,
  7. V. Gorge6,
  8. Z. Djebbour6,
  9. P. L. Voss1,2,
  10. A. Ougazzaden1,2

Article first published online: 21 NOV 2011

DOI: 10.1002/pssa.201100154

Issue

physica status solidi (a)

physica status solidi (a)

Volume 209, Issue 1, pages 25–28, January 2012

Additional Information

How to Cite

Pantzas, K., Patriarche, G., Orsal, G., Gautier, S., Moudakir, T., Abid, M., Gorge, V., Djebbour, Z., Voss, P. L. and Ougazzaden, A. (2012), Investigation of a relaxation mechanism specific to InGaN for improved MOVPE growth of nitride solar cell materials. Phys. Status Solidi A, 209: 25–28. doi: 10.1002/pssa.201100154

Author Information

  1. 1

    Georgia Institute of Technology, GT-Lorraine, 2-3 Rue Marconi, 57070 Metz, France

  2. 2

    UMI 2958, Georgia Tech-CNRS, 2-3 Rue Marconi, 57070 Metz, France

  3. 3

    CNRS-Laboratoire de Photonique et des Nanostructures (LPN), Route de Nozay, 91460 Marcoussis, France

  4. 4

    Laboratoire Matériaux Optiques, Photonique et Systèmes (LMOPS), EA4423, Université Paul Verlaine Metz - Supélec, 2 Rue Edouard Belin, 57070 Metz, France

  5. 5

    Supélec, 2 Rue Edouard Belin, 57070 Metz, France

  6. 6

    LGEP, UMR 8507 CNRS, Supélec, UPMC, Univ. Paris-Sud 11, 11 rue Joliot-Curie, Plateau de Moulon, 91192 Gif-sur-Yvette Cedex, France

*Phone: +33 (0)3 87 20 39 21, Fax: +33 (0)3 87 20 39 40

Publication History

  1. Issue published online: 15 DEC 2011
  2. Article first published online: 21 NOV 2011
  3. Manuscript Accepted: 26 AUG 2011
  4. Manuscript Revised: 22 AUG 2011
  5. Manuscript Received: 8 MAY 2011

Funded by

  • ANR Habisol
  • NewPVonGlass
  • France Telecom – Orange Grant

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