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Keywords:

  • gallium nitride;
  • high purity fused silica;
  • metal organic chemical vapour deposition

Abstract

A significant resistivity reduction was observed for GaN:Si films grown on high purity fused silica by metal organic vapour deposition when an InGaN:Si sacrificial layer was inserted beneath or within the GaN:Si layers. Thereby at least part of the GaN:Si layer on top of the sacrificial layer was grown at high temperature. Using this technique, a film resistance of 0.8 Ω cm was obtained, compared to a resistance of 60 Ω cm measured for the same layer stack without InGaN sacrificial layer.