Enhanced light output power of green LEDs employing AlGaN interlayer in InGaN/GaN MQW structure on sapphire (0001) substrate
Article first published online: 9 JAN 2012
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 209, Issue 3, pages 473–476, March 2012
How to Cite
Shioda, T., Yoshida, H., Tachibana, K., Sugiyama, N. and Nunoue, S. (2012), Enhanced light output power of green LEDs employing AlGaN interlayer in InGaN/GaN MQW structure on sapphire (0001) substrate. Phys. Status Solidi A, 209: 473–476. doi: 10.1002/pssa.201100356
- Issue published online: 27 FEB 2012
- Article first published online: 9 JAN 2012
- Manuscript Accepted: 7 DEC 2011
- Manuscript Revised: 6 DEC 2011
- Manuscript Received: 8 JUL 2011
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