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Keywords:

  • efficiency;
  • LEDs;
  • nitride;
  • quaternary;
  • simulations

Abstract

This work presents a theoretical comparison of efficiency in III-nitride light emitting diodes (LEDs). We simulate non-, semi-, and polar devices, and analyze their IV characteristics and internal quantum efficiencies (IQEs). In addition we present simulations of a new structural design for nitride devices, with decreased polarization charges, using quaternary AlInGaN material.