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Simulation of InGaN quantum well LEDs with reduced internal polarization

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Abstract

This work presents a theoretical comparison of efficiency in III-nitride light emitting diodes (LEDs). We simulate non-, semi-, and polar devices, and analyze their IV characteristics and internal quantum efficiencies (IQEs). In addition we present simulations of a new structural design for nitride devices, with decreased polarization charges, using quaternary AlInGaN material.

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