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    H. Furuya, Y. Hashimoto, K. Yamane, N. Okada, K. Tadatomo, Characterization of {11−22} GaN grown using two-step growth technique on shallowly etched r-plane patterned sapphire substrates, Journal of Crystal Growth, 2014, 391, 41

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    Jiankun Yang, Tongbo Wei, Ziqiang Huo, Yonghui Zhang, Qiang Hu, Xuecheng Wei, Baojuan Sun, Ruifei Duan, Junxi Wang, Defect reduction in semipolar {101̄3̄} GaN grown on m-sapphire via two-step nanoepitaxial lateral overgrowth, CrystEngComm, 2014, 16, 21, 4562

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    Florian Tendille, Philippe De Mierry, Philippe Vennéguès, Sebastien Chenot, Monique Teisseire, Defects reduction method in (11–22) semipolar GaN grown on patterned sapphire substrate by MOCVD: toward heteroepitaxial semipolar GaN free of basal stacking faults, Journal of Crystal Growth, 2014,

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    Hiroshi Furuya, Keisuke Yamane, Narihito Okada, Kazuyuki Tadatomo, Self-Separation of Large Freestanding Semipolar {112̄2} GaN Films Usingr-Plane Patterned Sapphire Substrates, Japanese Journal of Applied Physics, 2013, 52, 8S, 08JA09

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