Green light-emitting diodes fabricated on semipolar (11–22) GaN on r-plane patterned sapphire substrate
Version of Record online: 9 JAN 2012
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 209, Issue 3, pages 469–472, March 2012
How to Cite
Okada, N., Uchida, K., Miyoshi, S. and Tadatomo, K. (2012), Green light-emitting diodes fabricated on semipolar (11–22) GaN on r-plane patterned sapphire substrate. Phys. Status Solidi A, 209: 469–472. doi: 10.1002/pssa.201100385
- Issue online: 27 FEB 2012
- Version of Record online: 9 JAN 2012
- Manuscript Accepted: 1 DEC 2011
- Manuscript Revised: 20 AUG 2011
- Manuscript Received: 18 JUL 2011
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