Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscope
Article first published online: 25 JAN 2012
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 209, Issue 3, pages 424–426, March 2012
How to Cite
Naresh-Kumar, G., Hourahine, B., Vilalta-Clemente, A., Ruterana, P., Gamarra, P., Lacam, C., Tordjman, M., di Forte-Poisson, M. A., Parbrook, P. J., Day, A. P., England, G. and Trager-Cowan, C. (2012), Imaging and identifying defects in nitride semiconductor thin films using a scanning electron microscope. Phys. Status Solidi A, 209: 424–426. doi: 10.1002/pssa.201100416
- Issue published online: 27 FEB 2012
- Article first published online: 25 JAN 2012
- Manuscript Accepted: 14 DEC 2011
- Manuscript Received: 8 JUL 2011
- EU. Grant Number: PITN-GA-2008-213238 (RAINBOW)
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