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Original Paper

Greatly enhanced performance of InGaN/GaN nanorod light emitting diodes

  1. J. Bai,
  2. Q. Wang,
  3. T. Wang*

Article first published online: 15 FEB 2012

DOI: 10.1002/pssa.201100456

Issue

physica status solidi (a)

physica status solidi (a)

Volume 209, Issue 3, pages 477–480, March 2012

Additional Information

How to Cite

Bai, J., Wang, Q. and Wang, T. (2012), Greatly enhanced performance of InGaN/GaN nanorod light emitting diodes. Phys. Status Solidi A, 209: 477–480. doi: 10.1002/pssa.201100456

Author Information

  1. Department of Electronic and Electrical Engineering, University of Sheffield, Mappin Street, Sheffield, S1 3JD, UK

*Phone: +44 114 2295383, Fax: +44 114 2225143

Publication History

  1. Issue published online: 27 FEB 2012
  2. Article first published online: 15 FEB 2012
  3. Manuscript Accepted: 24 JAN 2012
  4. Manuscript Revised: 3 JAN 2012
  5. Manuscript Received: 19 JUL 2011

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This article has been cited by:

  1. 1
    J. Benton, J. Bai, T. Wang, Enhancement in solar hydrogen generation efficiency using a GaN-based nanorod structure, Applied Physics Letters, 2013, 102, 17, 173905

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  2. 2
    Sejoon Lee, Youngmin Lee, Deuk Young Kim, Residual strain effects on the luminescence properties of self-organized GaN vertical nanorods grown by using HVPE, Journal of the Korean Physical Society, 2013, 62, 3, 518

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  3. 3
    P. Renwick, H. Tang, J. Bai, T. Wang, Reduced longitudinal optical phonon-exciton interaction in InGaN/GaN nanorod structures, Applied Physics Letters, 2012, 100, 18, 182105

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