Fabrication of a-plane InN nanostructures on patterned a-plane GaN template by ECR-MBE
Article first published online: 9 FEB 2012
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 209, Issue 3, pages 447–450, March 2012
How to Cite
Araki, T., Yamashita, S., Yamaguchi, T., Yoon, E. and Nanishi, Y. (2012), Fabrication of a-plane InN nanostructures on patterned a-plane GaN template by ECR-MBE. Phys. Status Solidi A, 209: 447–450. doi: 10.1002/pssa.201100520
- Issue published online: 27 FEB 2012
- Article first published online: 9 FEB 2012
- Manuscript Accepted: 19 JAN 2012
- Manuscript Revised: 28 NOV 2011
- Manuscript Received: 20 AUG 2011
- Ministry of Education, Science, and Technology. Grant Number: R31-2008-000-10075-0
a-plane InN nanostructures were fabricated on a hole-patterned a-plane GaN template by electron-cyclotron-resonance plasma-excited molecular beam epitaxy (ECR-MBE). The growth temperature should be optimized to realize precise nucleation at the patterned holes with sufficient In desorption and a sufficiently long In migration length. Polarity determination clearly revealed that a-plane InN crystals have an anisotropic growth morphology. The InN growth rate in the N-polar [000–1] direction is higher than those in the In-polar  and [1–100] directions. a-plane InN nanowalls were fabricated by exploiting the different the growth rates in the 〈0001〉 and 〈1–100〉 directions.
SEM image of position-controlled a-plane InN nanostructures grown by ECR-MBE on a hole-patterned a-plane GaN template.