Fabrication of a-plane InN nanostructures on patterned a-plane GaN template by ECR-MBE

Authors

  • Tsutomu Araki,

    Corresponding author
    1. Department of Photonics, Ritsumeikan University, 1-1-1 Noji-higashi, Kusatsu, Shiga 525-8577, Japan
    • Phone: +81-775615030, Fax: +81-775613994
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  • Shuhei Yamashita,

    1. Department of Photonics, Ritsumeikan University, 1-1-1 Noji-higashi, Kusatsu, Shiga 525-8577, Japan
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  • Tomohiro Yamaguchi,

    1. Ritsumeikan Global Innovation Research Organization (R-GIRO), Ritsumeikan University, 1-1-1 Noji-higashi, Kusatsu, Shiga 525-8577, Japan
    2. Present address: Department of Information and Communications Engineering, Kogakuin University, 2665-1 Nakano-machi, Hachiouji, Tokyo 192-0015, Japan
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  • Euijoon Yoon,

    1. Department of Materials Science and Engineering, WCU Hybrid Materials Program, Seoul National University, Mt56-1, Sillim-dong, Gwanak-gu, Seoul 151-744, Korea
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  • Yasushi Nanishi

    1. Ritsumeikan Global Innovation Research Organization (R-GIRO), Ritsumeikan University, 1-1-1 Noji-higashi, Kusatsu, Shiga 525-8577, Japan
    2. Department of Materials Science and Engineering, WCU Hybrid Materials Program, Seoul National University, Mt56-1, Sillim-dong, Gwanak-gu, Seoul 151-744, Korea
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Abstract

a-plane InN nanostructures were fabricated on a hole-patterned a-plane GaN template by electron-cyclotron-resonance plasma-excited molecular beam epitaxy (ECR-MBE). The growth temperature should be optimized to realize precise nucleation at the patterned holes with sufficient In desorption and a sufficiently long In migration length. Polarity determination clearly revealed that a-plane InN crystals have an anisotropic growth morphology. The InN growth rate in the N-polar [000–1] direction is higher than those in the In-polar [0001] and [1–100] directions. a-plane InN nanowalls were fabricated by exploiting the different the growth rates in the 〈0001〉 and 〈1–100〉 directions.

original image

SEM image of position-controlled a-plane InN nanostructures grown by ECR-MBE on a hole-patterned a-plane GaN template.

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