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Keywords:

  • GaN;
  • photoluminescence kinetics;
  • quantum dots

Abstract

Photoluminescence (PL) kinetics of GaN quantum dots (QDs) in an AlN matrix has been investigated. We have found experimentally that the PL decay law of a GaN/AlN QD ensemble is non-exponential in the single-exciton recombination regime, and propose a model explaining the PL kinetics of GaN/AlN QD ensemble, which takes into account fluctuations of the QD shape.