MOCVD growth of semipolar AlxGa1−xN on m-plane sapphire for applications in deep-ultraviolet light emitters
Article first published online: 13 JUL 2011
Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 208, Issue 12, pages 2724–2729, December 2011
How to Cite
Balakrishnan, K., Lachab, M., Chen, H. C., Blom, D., Adivarahan, V., Ahmad, I., Fareed, Q. and Khan, M. A. (2011), MOCVD growth of semipolar AlxGa1−xN on m-plane sapphire for applications in deep-ultraviolet light emitters. Phys. Status Solidi A, 208: 2724–2729. doi: 10.1002/pssa.201127078
- Issue published online: 23 NOV 2011
- Article first published online: 13 JUL 2011
- Manuscript Accepted: 6 JUN 2011
- Manuscript Revised: 14 FEB 2011
- Manuscript Received: 22 DEC 2009
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