MOCVD growth of semipolar AlxGa1−xN on m-plane sapphire for applications in deep-ultraviolet light emitters
Version of Record online: 13 JUL 2011
Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 208, Issue 12, pages 2724–2729, December 2011
How to Cite
Balakrishnan, K., Lachab, M., Chen, H. C., Blom, D., Adivarahan, V., Ahmad, I., Fareed, Q. and Khan, M. A. (2011), MOCVD growth of semipolar AlxGa1−xN on m-plane sapphire for applications in deep-ultraviolet light emitters. Phys. Status Solidi A, 208: 2724–2729. doi: 10.1002/pssa.201127078
- Issue online: 23 NOV 2011
- Version of Record online: 13 JUL 2011
- Manuscript Accepted: 6 JUN 2011
- Manuscript Revised: 14 FEB 2011
- Manuscript Received: 22 DEC 2009
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