AlGaN/GaN heterojunction bipolar transistors by ammonia molecular beam epitaxy
Article first published online: 27 SEP 2011
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 209, Issue 1, pages 216–220, January 2012
How to Cite
Raman, A., Hurni, C. A., Speck, J. S. and Mishra, U. K. (2012), AlGaN/GaN heterojunction bipolar transistors by ammonia molecular beam epitaxy. Phys. Status Solidi A, 209: 216–220. doi: 10.1002/pssa.201127169
- Issue published online: 15 DEC 2011
- Article first published online: 27 SEP 2011
- Manuscript Accepted: 31 AUG 2011
- Manuscript Revised: 26 JUN 2011
- Manuscript Received: 17 MAR 2011
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