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Doping of p-type ZnSb: Single parabolic band model and impurity band conduction

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Abstract

Even though the ZnSb compound has been known for decades and used in the earliest thermoelectric devices, the potential of the material as a modern thermoelectric may be underestimated. We synthesized p-type doped samples using ball-milling and hot-pressing and measured their thermoelectric properties including mobility and carrier concentration. Establishing a single parabolic band (SPB) model using these measurements on the Cu, Sn, and self-doped samples allows for predictions on the optimum thermoelectric efficiency. It is projected to reach zT = 0.75 at 700 K. Deviations from the SPB model at low carrier concentrations are discussed and impurity band conduction is brought in as a possible explanation.

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