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Optical characterization of magnetron sputtered p-type ZnO thin films codoped with Ga and As

Authors

  • Jang-Ho Park,

    1. Department of Materials Science and Engineering, Photonic and Electronic Thin Film Laboratory, Chonnam National University, 300 Yong-Bong Dong, Gwangju 500-757, Korea
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  • Ho-Yeon Seo,

    1. Department of Materials Science and Engineering, Photonic and Electronic Thin Film Laboratory, Chonnam National University, 300 Yong-Bong Dong, Gwangju 500-757, Korea
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  • Sang-Hun Jeong,

    1. Gwangju Center, Korea Basic Science Institute, 300 Yong-Bong Dong, Gwangju 500-757, Korea
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  • Byung-Teak Lee

    Corresponding author
    1. Department of Materials Science and Engineering, Photonic and Electronic Thin Film Laboratory, Chonnam National University, 300 Yong-Bong Dong, Gwangju 500-757, Korea
    • Phone: +82 62 530 1696, Fax: +82 62 530 1699
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Abstract

ZnO films codoped with Ga and As were characterized in detail. It was observed by IV measurement that the films maintain p-type characteristics even when the Ga/As ratio is as high as 9. Low-temperature photoluminescence spectra revealed emissions at 3.36, 3.35, 3.30, and 3.22 eV, which were assigned to the D°X, the A°X, the two-electron-satellite D°X, and the DAP transition, respectively. A PL peak also appeared at 3.34 eV in the case of Zn0.96Ga0.03As0.01O and Zn0.90Ga0.09As0.01O films. X-ray photoelectron spectroscopy indicated formation of Ga–As bonds with increasing Ga concentration, suggesting that the 3.34 eV peak is related to the Ga–As bonds.

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