Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire
Article first published online: 29 NOV 2011
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 209, Issue 3, pages 559–564, March 2012
How to Cite
Lai, K. Y., Paskova, T., Wheeler, V. D., Chung, T. Y., Grenko, J. A., Johnson, M. A. L., Udwary, K., Preble, E. A. and Evans, K. R. (2012), Indium incorporation in InGaN/GaN quantum wells grown on m-plane GaN substrate and c-plane sapphire. Phys. Status Solidi A, 209: 559–564. doi: 10.1002/pssa.201127345
- Issue published online: 27 FEB 2012
- Article first published online: 29 NOV 2011
- Manuscript Accepted: 3 NOV 2011
- Manuscript Revised: 7 OCT 2011
- Manuscript Received: 13 JUN 2011
- National Central University's Plan to Develop First-class Universities
- Top-level Research Centers Grants. Grant Number: 100G903-2
- National Science Council Grant. Grant Number: NSC-100-3113-E-008-001
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