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Keywords:

  • indium tin oxide;
  • inkjet printing;
  • ITO;
  • organic field effect transistors;
  • transparent conductive oxides

Abstract

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Indium tin oxide (ITO) thin films can be manufactured by spincoating or inkjet printing of a solution containing indium and tin oximato precursor complexes. After sintering at 600 °C and annealing in reducing atmosphere, resistivities as low as 2.34 × 10−3 Ω cm were observed, with a transparency of more than 95% in the visible region. The employment of an amorphous hafnia interlayer on top of a silicon dioxide dielectric was found to improve the wetting behaviour significantly. Thus source–drain structures could be obtained by inkjet-printing and field-effect transistors were constructed using poly(3-hexylthiophene) (P3HT) as organic semiconductor.