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Transparent indium tin oxide as inkjet-printed thin film electrodes for organic field-effect transistors

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Abstract

Indium tin oxide (ITO) thin films can be manufactured by spincoating or inkjet printing of a solution containing indium and tin oximato precursor complexes. After sintering at 600 °C and annealing in reducing atmosphere, resistivities as low as 2.34 × 10−3 Ω cm were observed, with a transparency of more than 95% in the visible region. The employment of an amorphous hafnia interlayer on top of a silicon dioxide dielectric was found to improve the wetting behaviour significantly. Thus source–drain structures could be obtained by inkjet-printing and field-effect transistors were constructed using poly(3-hexylthiophene) (P3HT) as organic semiconductor.

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