Preparation of Al-doped ZnO films by aqueous solution process using a continuous circulation reactor

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Abstract

The fabrication of Al-doped ZnO films by an aqueous solution process using a continuous circulation reactor was studied. By heating ZnO-saturated ammonia solutions containing 2–10 mM Al(NO3)3 with pH 10.7 at 90 °C under ambient pressure, polycrystalline ZnO films with Al content of 1–2 at.% were deposited. The carrier concentration of ZnO films increased with increasing Al content, indicating that Al was successfully incorporated into the ZnO crystals. The Al-doped ZnO films had carrier concentrations of 1019–1020 cm−3 and mobilities of 0.7–7 cm2/V/s after annealing at 300 °C in air.

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