Resistive-switching mechanism of transparent nonvolatile memory device based on gallium zinc oxide
Article first published online: 8 NOV 2011
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
physica status solidi (a)
Volume 209, Issue 2, pages 364–368, February 2012
How to Cite
Wang, Y. (2012), Resistive-switching mechanism of transparent nonvolatile memory device based on gallium zinc oxide. Phys. Status Solidi A, 209: 364–368. doi: 10.1002/pssa.201127391
- Issue published online: 25 JAN 2012
- Article first published online: 8 NOV 2011
- Manuscript Accepted: 10 OCT 2011
- Manuscript Revised: 21 SEP 2011
- Manuscript Received: 4 JUL 2011
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