Field emission properties of gallium oxide micro- and nanostructures in the scanning electron microscope

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Abstract

The field emission properties of gallium oxide nanowires grown by thermal evaporation–deposition have been investigated inside the chamber of a scanning electron microscope. Turn on electric fields and enhancement factors have been determined for Sn doped nanowires. X-ray photoelectron spectroscopy measurements have been performed to calculate the work function of Sn doped Ga2O3. The results show improved field emission properties of Sn doped Ga2O3 nanowires, with a lower threshold field (below 1.0 V/µm). The obtained values are competitive with those achieved in other nanostructured materials, including carbon nanotubes.

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