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Original Paper
Room temperature MBE deposition of Bi2Te3 and Sb2Te3 thin films with low charge carrier densities
Article first published online: 26 OCT 2011
DOI: 10.1002/pssa.201127440
Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Additional Information
How to Cite
Peranio, N., Winkler, M., Aabdin, Z., König, J., Böttner, H. and Eibl, O. (2012), Room temperature MBE deposition of Bi2Te3 and Sb2Te3 thin films with low charge carrier densities. Phys. Status Solidi A, 209: 289–293. doi: 10.1002/pssa.201127440
Publication History
- Issue published online: 25 JAN 2012
- Article first published online: 26 OCT 2011
- Manuscript Accepted: 5 OCT 2011
- Manuscript Revised: 22 SEP 2011
- Manuscript Received: 25 JUL 2011
Funded by
- German Research Foundation (DFG)
- Abstract
- Article
- References
- Cited By
Keywords:
- EDX;
- MBE;
- point defects;
- TEM;
- thermoelectric effects;
- thin films
Abstract
Sb2Te3 and Bi2Te3 thin films were grown at room temperature on SiO2 substrates using MBE and were subsequently annealed at 250 °C. The films were stoichiometric, polycrystalline, textured, and yielded strikingly low charge carrier densities of about 2.7 × 1019 cm−3. The in-plane transport properties were measured at room temperature, the thermopower was 130 µV K−1 for Sb2Te3 and −153 µV K−1 for Bi2Te3 thin films. The small charge carrier densities are explained by a reduced antisite defect density due to the low temperatures to which the thin films were exposed during annealing.