Get access

GaN-based p–i–n X-ray detection

Authors

  • Changsheng Yao,

    1. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou, P.R. China
    2. Graduate University of Chinese Academy of Sciences, 19A Yuquanlu, 100049 Beijing, P.R. China
    3. Institute of Semiconductors, Chinese Academy of Science, Qinghua East Road 35, 10008 Beijing, P.R. China
    Search for more papers by this author
  • Kai Fu,

    1. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou, P.R. China
    2. Graduate University of Chinese Academy of Sciences, 19A Yuquanlu, 100049 Beijing, P.R. China
    Search for more papers by this author
  • Guo Wang,

    1. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou, P.R. China
    2. Peking University Shenzhen Graduate School, Xili Town, Nanshan District, 518055 Shenzhen, P.R. China
    Search for more papers by this author
  • Guohao Yu,

    1. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou, P.R. China
    Search for more papers by this author
  • Min Lu

    Corresponding author
    1. Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Ruoshui Road 398, 215123 Suzhou, P.R. China
    • Phone: +86 0512 6287 2520, Fax: +86 0512 6287 2625
    Search for more papers by this author

Abstract

GaN-based p–i–n X-ray detectors have been fabricated. We observed using SEM that the surface of a GaN sample has a large number of hexagonal defects. The SEM results show that GaN itself contains numerous screw dislocations that will be the flow channel of leakage current, which in turn increased the reverse-bias leakage current of detectors. We have observed a two-step increase in X-ray photocurrent, which is caused by two different detection mechanisms: photovoltaic and photoconductive, and the total photocurrent (Jp) to dark current (Jd) ratio is about 27.7 times and the net photocurrent is about 2.52 µA at 110 V reverse bias. As the X-ray accelerating voltage increases, the photocurrent has a sublinear trend.

Ancillary